feb.1999 mitsubishi transistor modules QM30HQ-24 drive use for high power transistor insulated type outline drawing & circuit diagram dimensions in mm application base driver for high voltage transistor modules QM30HQ-24 ? i c collector current .......................... 30a ? v cex collector-emitter voltage ......... 1200v ? h fe dc current gain................................. 5 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 70 60 2 f 5.5 bc e 0.8 (16.5) 27 tab # 187, t=0.5 7.5 15 15 6 4.75 f 1.3 3.2 2.5 15 6.35 23.5 b c e label
feb.1999 test conditions v ce =1200v, v eb =2v v cb =1200v, emitter open v eb =7v i c =15a, i b =3a i c =15a, v ce =1v v cc =600v, i c =15a, i b1 =Ci b2 =3a transistor part conductive grease applied min. 5 symbol i cex i cbo i ebo v ce (sat) v be (sat) h fe t on t s t f r th (j-c) q r th (c-f) symbol v cex (sus) v cex v cbo v ebo i c p c i b t j t stg v iso conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc t c =25 c dc charged part to case, ac for 1 minute mounting screw m5 typical value absolute maximum ratings (tj=25 c, unless otherwise noted) parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector dissipation base current junction temperature storage temperature isolation voltage mounting torque weight ratings 1200 1200 1200 7 30 310 6 C40~+150 C40~+125 2500 1.47~1.96 15~20 90 unit v v v v a w a c c v nm kgcm g mitsubishi transistor modules QM30HQ-24 drive use for high power transistor insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v m s m s m s c/w c/w limits parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) typ. max. 1.0 1.0 200 1.0 1.5 1.5 7.0 2.0 0.4 0.25
feb.1999 dc current gain h fe performance curves common emitter output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector current i c (a) mitsubishi transistor modules QM30HQ-24 drive use for high power transistor insulated type saturation voltage characteristics (typical) saturation voltage v ce (sat) , v be (sat) (v) dc current gain vs. collector current (typical) 2 10 1 10 0 10 ? 10 ? 10 ? 10 0 10 1 10 2 10 1 10 0 10 ? 10 ? 10 0 10 1 10 2 10 40 0 012345 10 20 30 t j =25? i b =5a i b =3a i b =2a i b =1a i b =0.5a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t j =25? t j =125? v ce =1.0v 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t j =25? t j =125? v be(sat) v ce(sat) i b =3.0a
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